Dynamic random access memory and methods of manufacturing, writing and reading the same

ABSTRACT

A dynamic random access memory (DRAM) and methods of manufacturing, writing and reading the same. The DRAM includes a substrate, a bit line, a sidewall structure and an interconnection structure. The bit line is disposed on the substrate. The sidewall structure is disposed on a sidewall of the bit line. The sidewall structure includes a first insulation layer, a second insulation layer, and a shield conductor layer. The first insulation layer is disposed on the sidewall of the bit line. The second insulation layer is disposed on the first insulation layer. The shield conductor layer is disposed between the first insulation layer and the second insulation layer. The interconnection structure is electrically connected to the shield conductor layer. The DRAM and the manufacturing, writing and reading methods thereof can effectively reduce the parasitic capacitance of the bit line.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of Taiwan applicationserial no. 107121850, filed on Jun. 26, 2018. The entirety of theabove-mentioned patent application is hereby incorporated by referenceherein and made a part of this specification.

BACKGROUND OF THE INVENTION Field of the Invention

The invention relates to a memory and methods of manufacturing, writingand reading the same, and particularly relates to a dynamic randomaccess memory (DRAM) and methods of manufacturing, writing and readingthe same.

Description of Related Art

As the size of dynamic random access memory design continues to shrink,semiconductor devices continue to develop toward high integration. Theperformance of the dynamic random access memory may be affected by theparasitic capacitance of a bit line. Therefore, how to effectivelyreduce the parasitic capacitance of the bit line has become an importantresearch topic in this field.

SUMMARY OF THE INVENTION

The invention provides a dynamic random access memory and manufacturing,writing and reading methods thereof which can effectively reduce theparasitic capacitance of the bit line.

The invention provides a dynamic random access memory including asubstrate, a bit line, a sidewall structure and an interconnectionstructure. The bit line is disposed on the substrate. The sidewallstructure is disposed on a sidewall of the bit line. The sidewallstructure includes a first insulation layer, a second insulation layer,and a shield conductor layer. The first insulation layer is disposed onthe sidewall of the bit line. The second insulation layer is disposed onthe first insulation layer. The shield conductor layer is disposedbetween the first insulation layer and the second insulation layer. Theinterconnection structure is electrically connected to the shieldconductor layer.

The invention provides a method of manufacturing a dynamic random accessmemory including the following steps. A bit line is formed on asubstrate. A sidewall structure is formed on a sidewall of the bit line.The sidewall structure includes a first insulation layer, a secondinsulation layer, and a shield conductor layer. The first insulationlayer is disposed on the sidewall of the bit line. The second insulationlayer is disposed on the first insulation layer. The shield conductorlayer is disposed between the first insulation layer and the secondinsulation layer. An interconnection structure electrically connected tothe shield conductor layer is formed.

The invention provides a method of writing a dynamic random accessmemory. A writing method of a first logic level includes the followingsteps. A first shield voltage is applied to the shield conductor layer.A bit line high level voltage is applied to the bit line. The firstshield voltage is larger than or equal to the bit line high levelvoltage. A first word line operating voltage is applied to the wordline. A writing method of a second logic level includes the followingsteps. A second shield voltage is applied to the shield conductor layer.A bit line low level voltage is applied to the bit line. The secondshield voltage is smaller than or equal to the bit line low levelvoltage. A second word line operating voltage is applied to the wordline.

The invention provides a method of reading a dynamic random accessmemory including the following steps. An equalizing voltage is appliedto the bit line and a shield voltage is applied to the shield conductorlayer before performing reading. The equalizing voltage and the shieldvoltage are respectively smaller than a bit line high level voltage andlarger than a bit line low level voltage. The bit line high levelvoltage is a voltage applying to the bit line when storing the firstlogic level. The bit line low level voltage is a voltage applying to thebit line when storing the second logic level. A word line operatingvoltage is applied to the word line to perform reading the dynamicrandom access memory.

Based on the above, in the dynamic random access memory and the methodsof manufacturing, writing and reading the same provided by theinvention, the parasitic capacitance of the bit line can be reduced bythe shield conductor layer. Thereby, the resistance capacitance delay(RC-delay) can be reduced, and the dynamic random access memory can haveenough sensing margins. Accordingly, the dynamic random access memorycan have higher reliability and is conducive to apply to the low powerdynamic random access memory structure. In addition, the method ofmanufacturing the dynamic random access memory provided by the inventioncan be easily integrated with the existing processes.

In order to make the aforementioned features and advantages of thedisclosure more comprehensible, embodiments accompanied with figures aredescribed in detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

FIG. 1A to FIG. 1J are top views of a manufacturing process of a dynamicrandom access memory according to an embodiment of the invention.

FIG. 2A to FIG. 2J are cross-sectional views taken along a section lineA-A′ in FIG. 1A to FIG. 1J.

FIG. 3A to FIG. 3J are cross-sectional views taken along a section lineB-B′ in FIG. 1A to FIG. 1J.

FIG. 4A to FIG. 4J are cross-sectional views taken along a section lineC-C′ in FIG. 1A to FIG. 1J.

FIG. 5A to FIG. 5J are cross-sectional views taken along a section lineD-D′ in FIG. 1A to FIG. 1J.

FIG. 6 is a write operation flowchart of a first logic level of adynamic random access memory 10 according to an embodiment of theinvention.

FIG. 7 is a write operation flowchart of a second logic level of thedynamic random access memory 10 according to an embodiment of theinvention.

FIG. 8 is a read operation flowchart of the dynamic random access memory10 according to an embodiment of the invention.

DESCRIPTION OF THE EMBODIMENTS

In the following detailed description, for purposes of explanation,numerous specific details are set forth in order to provide a thoroughunderstanding of the disclosed embodiments. It will be apparent,however, that one or more embodiments may be practiced without thesespecific details. In other instances, well-known structures and devicesare schematically shown in order to simplify the drawing.

FIG. 1A to FIG. 1J are top views of a manufacturing process of a dynamicrandom access memory according to an embodiment of the invention. FIG.2A to FIG. 2J are cross-sectional views taken along a section line A-A′in FIG. 1A to FIG. 1J. FIG. 3A to FIG. 3J are cross-sectional viewstaken along a section line B-B′ in FIG. 1A to FIG. 1J. FIG. 4A to FIG.4J are cross-sectional views taken along a section line C-C′ in FIG. 1Ato FIG. 1J. FIG. 5A to FIG. 5J are cross-sectional views taken along asection line D-D′ in FIG. 1A to FIG. 1J. In the top views of FIG. 1A toFIG. 1J, in order to clearly illustrate the relationship between eachcomponent, some components in the cross-sectional views of FIG. 2A toFIG. 5J are omitted, and only a portion of the contour of a sidewallstructure is shown.

Referring to FIG. 1A, FIG. 2A, FIG. 3A, FIG. 4A and FIG. 5A, isolationstructures (e.g., isolation structures 102 a and isolation structures102 b) may be formed in a substrate 100 to define active regions AA. Thesubstrate 100 is a silicon substrate, for example. Materials of theisolation structures 102 a and the isolation structures 102 b aresilicon oxide, for example. The isolation structures 102 a and theisolation structures 102 b are made by a shallow trench isolationstructure process, for example.

In the present embodiment, top view patterns of the active regions AAlocated at two sides of the isolation structures 102 b may havedifferent extension directions, but the invention is not limitedthereto. For instance, the top view patterns of the active regions AAlocated at one side of the isolation structures 102 b may be extended ina direction D1 of a positive slope, and the top view patterns of theactive regions AA located at another side of the isolation structures102 b may be extended in a direction D2 of a negative slope. In anotherembodiment, the top view patterns of the active regions AA located atthe two sides of the isolation structures 102 b may also have the sameextension direction.

A word line WL may be formed. The word line WL is a buried word lineformed in the substrate 100, for example, but the invention is notlimited thereto. The word line WL may be extended along a direction D3.In addition, the word line WL may be electrically insulated from thesubstrate 100 by a dielectric layer (not shown). A material of the wordline WL is tungsten, aluminum, copper, or a combination thereof, forexample.

In the active regions AA, doped region 104 and doped region 106 arerespectively formed in the substrate 100 at one side and another side ofthe word line WL. A method of forming the doped region 104 and the dopedregion 106 is ion implantation, for example.

A dielectric layer 108 is formed on the substrate 100. A material of thedielectric layer 108 is silicon oxide, for example. A method of formingthe dielectric layer 108 is chemical vapor deposition, for example.

An opening 110 exposing the doped region 104 is formed in the dielectriclayer 108. A method of forming the opening 110 is to perform alithography process and an etching process on the dielectric layer 108,for example.

Referring to FIG. 1B, FIG. 2B, FIG. 3B, FIG. 4B and FIG. 5B, a bit lineBL is formed on the substrate 100. For example, the bit line BL may beformed on the dielectric layer 108. The bit line BL may be extendedalong a direction D4, such that the word line WL and the bit line BL maybe intersected with each other. In addition, the word line WL and thebit line BL may be electrically insulated from each other by adielectric material (e.g., the dielectric layer 108). The bit line BLmay be a single layer structure or a multilayer structure. In thepresent embodiment, it is illustrated that the bit line BL is themultilayer structure as an example. The bit line BL may include aconductor layer 112 and a conductor layer 114. The conductor layer 112is a doped polycrystalline silicon, for example. The conductor layer 114is a combination layer of tungsten/titanium nitride/titanium (W/TiN/Ti),for example.

The bit line BL is electrically connected to the doped region 104. Forinstance, a portion of the bit line BL may be filled in the opening 110to be electrically connected to the doped region 104. That is, the bitline BL filled in the opening 110 may be used as a contact, but theinvention is not limited thereto. In other embodiments, the contact usedto be electrically connected to the bit line BL and the doped region 104may be further formed. In addition, a hard mask layer 116 and a caplayer 118 may be formed on the bit line BL in sequence. A material ofthe hard mask layer 116 is silicon nitride, for example. A material ofthe cap layer 118 is silicon oxide, for example.

For instance, a method of forming the conductor layer 112, the conductorlayer 114, the hard mask layer 116 and the cap layer 118 may include thefollowing steps. A first conductor material layer (not shown), a secondconductor material layer (not shown), a hard mask material layer (notshown) and a cap material layer (not shown) are formed on the dielectriclayer 108 in sequence. Then, a lithography and etching process isperformed on the cap material layer, the hard mask material layer, thesecond conductor material layer and the first conductor material layer.

In FIG. 1C to FIG. 1J, except the components that need to beillustrated, the components covered by other film layers are omitted.

Referring to FIG. 1C, FIG. 2C, FIG. 3C, FIG. 4C and FIG. 5C, aninsulation material layer 120 and a shield conductor material layer 122may be conformally formed on the bit line BL in sequence. A material ofthe insulation material layer 120 is silicon nitride, for example. Amethod of forming the insulation material layer 120 is chemical vapordeposition, for example. A material of the shield conductor materiallayer 122 is metal or doped polycrystalline silicon, for example. In thepresent embodiment, it is illustrated that the material of the shieldconductor material layer 122 is titanium nitride as an example. A methodof forming the shield conductor material layer 122 is chemical vapordeposition or physical vapor deposition, for example.

Referring to FIG. 1D, FIG. 2D, FIG. 3D, FIG. 4D and FIG. 5D, an etchback process is performed on the shield conductor material layer 122 andthe insulation material layer 120 to form a shield conductor layer 122 aand an insulation layer 120 a respectively. In addition, in theaforementioned etch back process, a portion of or all of the cap layer118 may be removed simultaneously. The etch back process is a dryetching process, for example.

An insulation material layer 124 covering the shield conductor layer 122a and the insulation layer 120 a may be conformally formed on the bitline BL. A material of the insulation material layer 124 is siliconnitride, for example. A method of forming the insulation material layer124 is chemical vapor deposition, for example.

A dielectric layer 126 may be formed on the insulation material layer124 at two sides of the bit line BL. A material of the dielectric layer126 is silicon oxide, for example. In an embodiment, a method of formingthe dielectric layer 126 may include the following steps. First, adielectric material layer (not shown) covering the insulation materiallayer 124 may be formed by spin coating, and an annealing process may beperformed on the dielectric material layer. Then, a chemical mechanicalpolishing process is performed on the dielectric material layer by usingthe insulation material layer 124 located above the bit line BL as apolishing stop layer.

A cap layer 128 covering the insulation material layer 124 and thedielectric layer 126 may be formed. A material of the cap layer 128 issilicon oxide, for example. A method of forming the cap layer 128 ischemical vapor deposition, for example.

Referring to FIG. 1E, FIG. 2E, FIG. 3E, FIG. 4E and FIG. 5E, a patternedphotoresist layer 130 is formed on the cap layer 128. The patternedphotoresist layer 130 may expose a portion of the cap layer 128 locatedabove the doped region 106. The patterned photoresist layer 130 isformed by performing a lithography process, for example.

The cap layer 128, the dielectric layer 126, the insulation materiallayer 124 and the dielectric layer 108 exposed by the patternedphotoresist layer 130 may be removed to form an opening 132 exposing thedoped region 106. In addition, in a process of forming the opening 132,a portion of the doped region 106 may be removed.

Referring to FIG. 1F, FIG. 2F, FIG. 3F, FIG. 4F and FIG. 5F, thepatterned photoresist layer 130 is removed. A conductor layer 134 isformed in the opening 132. A material of the conductor layer 134 isdoped polycrystalline silicon or metal, for example. In the presentembodiment, it is illustrated that the material of the conductor layer134 is doped polycrystalline silicon as an example. A method of formingthe conductor layer 134 is that a conductor material layer (not shown)filled in the opening 132 is formed, and then the conductor materiallayer outside the opening 132 is removed by a chemical mechanicalpolishing process, for example. In addition, in a process of removing aportion of the conductor material layer, a portion of the insulationmaterial layer 124 may be removed simultaneously to form an insulationlayer 124 a, and the cap layer 128, a portion of the dielectric layer126, the cap layer 118, a portion of the shield conductor layer 122 aand a portion of the insulation layer 120 a may be removedsimultaneously. In addition, in a process of removing the portion of theconductor material layer, a portion of the hard mask layer 116 may beremoved.

Thereby, a sidewall structure 136 is formed on a sidewall of the bitline BL. The sidewall structure 136 includes the insulation layer 120 a,the insulation layer 124 a and the shield conductor layer 122 a. Theinsulation layer 120 a is disposed on the sidewall of the bit line BL.The insulation layer 124 a is disposed on the insulation layer 120 a.The shield conductor layer 122 a is disposed between the insulationlayer 120 a and the insulation layer 124 a. In the present embodiment,the sidewall structure 136 is formed by the aforementioned method, butthe invention is not limited thereto.

Referring to FIG. 1G, FIG. 2G, FIG. 3G, FIG. 4G and FIG. 5G, an etchback process may be performed on the conductor layer 134 to remove aportion of the conductor layer 134. The etch back process is a dryetching process, for example.

A spacer 138 may be formed on the conductor layer 134. A material of thespacer 138 is silicon nitride, for example. A method of forming thespacer 138 is that a spacer layer (not shown) is conformally formed onthe conductor layer 134, and then an etch back process is performed onthe spacer layer, for example. A method of forming the spacer layer ischemical vapor deposition, for example. The etch back process is a dryetching process, for example. The spacer 138 may be used as a mask toremove the conductor layer 134 not covered by the spacer 138, so as toform a contact 134 a. A method of removing a portion of the conductorlayer 134 is a dry etching method, for example.

Referring to FIG. 1H, FIG. 2H, FIG. 3H, FIG. 4H and FIG. 5H, a hard masklayer 140 and a patterned photoresist layer 142 may be formed on thesidewall structure 136, the hard mask layer 116 and the contact 134 a insequence. The patterned photoresist layer 142 is formed by performing alithography process, for example. A material of the hard mask layer 140is silicon nitride, for example. A method of forming the hard mask layer140 is chemical vapor deposition, for example.

A portion of the hard mask layer 140 located at an end position of thebit line BL may be removed by using the patterned photoresist layer 142as a mask, so as to form an opening 144 exposing the shield conductorlayer 122 a. In a process of removing the portion of the hard mask layer140, a portion of the hard mask layer 116 and a portion of the sidewallstructure 136 may be removed simultaneously. A method of removing theportion of the hard mask layer 140 is a dry etching method, for example.

Referring to FIG. 1I, FIG. 2I, FIG. 3I, FIG. 4I and FIG. 5I, thepatterned photoresist layer 142 is removed. A patterned photoresistlayer 146 may be formed on the sidewall structure 136, the hard masklayer 116 and the contact 134 a, and the patterned photoresist layer 146is filled in the opening 144. The patterned photoresist layer 146 isformed by performing a lithography process, for example.

A portion of the hard mask layer 140 located at another end position ofthe bit line BL may be removed by using the patterned photoresist layer146 as a mask, so as to form an opening 148. A method of removing theportion of the hard mask layer 140 is a dry etching method, for example.The opening 148 and the opening 144 may be staggered arranged along thedirection D3. A portion of the hard mask layer 116 may be removed byusing the patterned photoresist layer 146 as a mask, so that the opening148 exposes the bit line BL. A method of removing the portion of thehard mask layer 116 is a dry etching method, for example.

Referring to FIG. 1J, FIG. 2J, FIG. 3J, FIG. 4J and FIG. 5J, thepatterned photoresist layer 146 is removed. An interconnection structure150 electrically connected to the shield conductor layer 122 a may beformed, and an interconnection structure 152 electrically connected tothe bit line BL may be formed. The interconnection structure 150 and thebit line BL may be electrically insulated from each other by adielectric material (e.g., the hard mask layer 116). A method of formingthe interconnection structure 150 is to perform a metal interconnectionprocess at an end position of the bit line BL, for example. A method offorming the interconnection structure 152 is to perform a metalinterconnection process at another end position of the bit line BL, forexample.

The interconnection structure 150 may include a contact 154 and aconductive wire 156. The contact 154 is disposed in the opening 144, andthe conductive wire 156 is disposed on the contact 154. Theinterconnection structure 152 may include a contact 158 and a conductivewire 160. The contact 158 is disposed in the opening 148, and theconductive wire 160 is disposed on the contact 158. The contact 154 andthe contact 158 may be staggered arranged along the direction D3. Thecontact 154 and the contact 158 may be located at one end and anotherend of the same bit line BL respectively. The conductive wire 156 andthe conductive wire 160 may be extended along the direction D3 and thedirection D4 respectively. The contact 154 and the contact 158 arecombination layers of tungsten/titanium nitride (W/TiN), for example.The conductive wire 156 and the conductive wire 160 are combinationlayers of tungsten/tungsten nitride (W/WN), for example.

A dielectric layer 162 covering the interconnection structure 152 may beformed on the hard mask layer 140. A material of the dielectric layer162 is silicon oxide, for example. A method of forming the dielectriclayer 162 is chemical vapor deposition, for example.

A capacitor structure 164 electrically connected to the doped region 106may be formed in the dielectric layer 162. The capacitor structure 164may be electrically connected to the doped region 106 by the contact 134a. In a process of forming the capacitor structure 164, a portion of thehard mask layer 140 and the spacer 138 may be removed. In the presentembodiment, the capacitor structure 164 is merely illustrative, but theinvention is not limited thereto. A person skilled in the art may designand adjust the capacitor structure 164 according to the actualrequirements. For instance, the capacitor structure 164 may be U-shaped,and the capacitor structure 164 may be electrically connected to thecontact 134 a by a landing pad (not shown).

Hereinafter, the dynamic random access memory 10 of the aforementionedembodiments are illustrated by FIG. 1B, FIG. 1J, FIG. 2J, FIG. 3J, FIG.4J and FIG. 5J.

Referring to FIG. 1B, FIG. 1J, FIG. 2J, FIG. 3J, FIG. 4J and FIG. 5J,the dynamic random access memory 10 includes the substrate 100, the bitline BL, the sidewall structure 136 and the interconnection structure150, and may further include at least one of the isolation structures(e.g., the isolation structures 102 a and the isolation structure 102b), the word line WL, the doped region 104, the doped region 106, thecapacitor structure 164 and the interconnection structure 152. The bitline BL is disposed on the substrate 100. The sidewall structure 136 isdisposed on the sidewall of the bit line BL. The sidewall structure 136includes the insulation layer 120 a, the insulation layer 124 a and theshield conductor layer 122 a. The material of the shield conductormaterial layer 122 a is metal or doped polycrystalline silicon, forexample. The insulation layer 120 a is disposed on the sidewall of thebit line BL. The insulation layer 124 a is disposed on the insulationlayer 120 a. The shield conductor layer 122 a is disposed between theinsulation layer 120 a and the insulation layer 124 a. Theinterconnection structure 150 is electrically connected to the shieldconductor layer 122 a. The interconnection structure 150 may beelectrically connected to the shield conductor layer 122 a at an endposition of the bit line BL. The interconnection structure 150 and thebit line BL may be electrically insulated from each other. The isolationstructures 102 a and the isolation structures 102 b are disposed in thesubstrate 100 to define the active regions AA. The word line WL and thebit line BL may be intersected with and electrically insulated from eachother. The doped region 104 and the doped region 106 are located in thesubstrate 100 at one side and another side of the word line WLrespectively. The bit line BL is electrically connected to the dopedregion 104. The capacitor structure 164 may be electrically connected tothe doped region 106 by the contact 134 a.

In addition, the materials, the forming methods and the functions ofeach component in the dynamic random access memory 10 have beenillustrated in the aforementioned embodiments, and will not be repeatedherein.

Based on the aforementioned embodiments, it is known that the dynamicrandom access memory 10 can reduce the parasitic capacitance of the bitline BL by the shield conductor layer 122 a. Thereby, the resistancecapacitance delay (RC-delay) can be reduced, and the dynamic randomaccess memory can have enough sensing margins. Accordingly, the dynamicrandom access memory 10 can have higher reliability and is conducive toapply to the low power dynamic random access memory structure. Inaddition, the method of manufacturing the dynamic random access memory10 provided by the invention can be easily integrated with the existingprocesses.

FIG. 6 is a write operation flowchart of a first logic level of thedynamic random access memory 10 according to an embodiment of theinvention. In the present embodiment, it is illustrated that the firstlogic level is logic 1 as an example.

Referring to FIG. 6, a step S100 is performed, a shield voltage (V_(S))is applied to the shield conductor layer 122 a. A step S102 isperformed, a bit line high level voltage (V_(BLH)) is applied to the bitline BL. The shield voltage (V_(S)) is larger than or equal to the bitline high level voltage (V_(BLH)). A step S104 is performed, a word lineoperating voltage (V_(WL)) is applied to the word line WL.

FIG. 7 is a write operation flowchart of a second logic level of thedynamic random access memory 10 according to an embodiment of theinvention. In the present embodiment, it is illustrated that the secondlogic level is logic 0 as an example.

Referring to FIG. 7, a step S200 is performed, a shield voltage (V_(S))is applied to the shield conductor layer 122 a. A step S202 isperformed, a bit line low level voltage (V_(BLL)) is applied to the bitline BL. The shield voltage (V_(S)) is smaller than or equal to the bitline low level voltage (V_(BLL)). A step S204 is performed, a word lineoperating voltage (V_(WL)) is applied to the word line WL.

FIG. 8 is a read operation flowchart of the dynamic random access memory10 according to an embodiment of the invention. In the presentembodiment, it is illustrated that the first logic level is logic 1 asan example, and the second logic level is logic 0 as an example.

Referring to FIG. 8, a step S300 is performed, before performingreading, an equalizing voltage (V_(BLEQ)) is applied to the bit line BL,and a shield voltage (V_(S)) is applied to the shield conductor layer122 a, wherein the equalizing voltage (V_(BLEQ)) and the shield voltage(V_(S)) are respectively smaller than a bit line high level voltage(V_(BLH)) and larger than a bit line low level voltage (V_(BLL)). Theequalizing voltage (V_(BLEQ)) and the shield voltage (V_(S)) may be thesame or different voltages. The bit line high level voltage (V_(BLH)) isa voltage applying to the bit line BL when storing the first logiclevel. The bit line low level voltage (V_(BLL)) is a voltage applying tothe bit line BL when storing the second logic level. The equalizingvoltage (V_(BLEQ)) is half of a sum of the bit line high level voltage(V_(BLH)) and the bit line low level voltage (V_(BLL)), for example. Theshield voltage (V_(S)) is half of the sum of the bit line high levelvoltage (V_(BLH)) and the bit line low level voltage (V_(BLL)), forexample. A step S302 is performed, the word line operating voltage(V_(WL)) is applied to the word line WL to perform reading the dynamicrandom access memory 10. In addition, after applying the equalizingvoltage (V_(BLEQ)) to the bit line BL and after a period of waitingtime, the word line operating voltage (V_(WL)) may be applied to theword line WL.

Example

In Table 1 below, the voltages of write operation and read operation ofthe dynamic random access memory 10 according to an embodiment of theinvention are illustrated, but the invention is not limited thereto.

TABLE 1 Write logic 1 Write logic 0 Read Word line voltage 2.6 V   2.6V   2.6 V Bit line voltage 1 V 0 V 0.5 V Shield voltage 1 V 0 V 0.5 V

In summary, in the dynamic random access memory and the methods ofmanufacturing, writing and reading the same of the aforementionedembodiments, the parasitic capacitance of the bit line can be reduced bythe shield conductor layer. Thereby, the resistance capacitance delaycan be reduced, and the dynamic random access memory can have enoughsensing margins. Accordingly, the dynamic random access memory can havehigher reliability and is conducive to apply to the low power dynamicrandom access memory structure. In addition, the method of manufacturingthe dynamic random access memory of the aforementioned embodiments canbe easily integrated with the existing processes.

Although the invention has been described with reference to the aboveembodiments, it will be apparent to one of ordinary skill in the artthat modifications to the described embodiments may be made withoutdeparting from the spirit of the invention. Accordingly, the scope ofthe invention is defined by the attached claims not by the abovedetailed descriptions.

What is claimed is:
 1. A dynamic random access memory, comprising: asubstrate; a bit line, disposed on the substrate; a sidewall structure,disposed on a sidewall of the bit line, and comprising: a firstinsulation layer, disposed on the sidewall of the bit line; a secondinsulation layer, disposed on the first insulation layer; and a shieldconductor layer, disposed between the first insulation layer and thesecond insulation layer; and an interconnection structure, electricallyconnected to the shield conductor layer.
 2. The dynamic random accessmemory according to claim 1, wherein a material of the shield conductorlayer comprises metal or doped polycrystalline silicon.
 3. The dynamicrandom access memory according to claim 1, wherein the interconnectionstructure and the bit line are electrically insulated from each other.4. The dynamic random access memory according to claim 1, wherein theinterconnection structure is electrically connected to the shieldconductor layer at an end position of the bit line.
 5. The dynamicrandom access memory according to claim 1, further comprising isolationstructures, wherein the isolation structures are disposed in thesubstrate to define active regions.
 6. The dynamic random access memoryaccording to claim 1, further comprising a word line, wherein the wordline and the bit line are intersected with and electrically insulatedfrom each other.
 7. The dynamic random access memory according to claim6, further comprising a first doped region and a second doped region,wherein the first doped region and the second doped region arerespectively located in the substrate at one side and another side ofthe word line, and the bit line is electrically connected to the firstdoped region.
 8. The dynamic random access memory according to claim 7,further comprising a capacitor structure, wherein the capacitorstructure is electrically connected to the second doped region.
 9. Amethod of manufacturing a dynamic random access memory, comprising:forming a bit line on a substrate; forming a sidewall structure on asidewall of the bit line, wherein the sidewall structure comprises: afirst insulation layer, disposed on the sidewall of the bit line; asecond insulation layer, disposed on the first insulation layer; and ashield conductor layer, disposed between the first insulation layer andthe second insulation layer; and forming an interconnection structureelectrically connected to the shield conductor layer.
 10. The method ofmanufacturing the dynamic random access memory according to claim 9,wherein a method of forming the sidewall structure comprises:conformally forming a first insulation material layer and a shieldconductor material layer on the bit line in sequence; performing an etchback process on the shield conductor material layer and the firstinsulation material layer to form the shield conductor layer and thefirst insulation layer respectively; conformally forming a secondinsulation material layer covering the shield conductor layer and thefirst insulation layer on the bit line; and removing a portion of thesecond insulation material layer to form the second insulation layer.11. The method of manufacturing the dynamic random access memoryaccording to claim 9, wherein a method of forming the interconnectionstructure comprises performing a metal interconnection process at an endposition of the bit line.
 12. The method of manufacturing the dynamicrandom access memory according to claim 9, further comprising formingisolation structures in the substrate to define active regions.
 13. Themethod of manufacturing the dynamic random access memory according toclaim 9, further comprising forming a word line, wherein the word lineand the bit line are intersected with and electrically insulated fromeach other.
 14. The method of manufacturing the dynamic random accessmemory according to claim 13, further comprising forming a first dopedregion and a second doped region in the substrate at one side andanother side of the word line respectively, wherein the bit line iselectrically connected to the first doped region.
 15. The method ofmanufacturing the dynamic random access memory according to claim 14,further comprising forming a capacitor structure electrically connectedto the second doped region.
 16. A method of writing the dynamic randomaccess memory according to claim 6, wherein a writing method of a firstlogic level comprises: applying a first shield voltage to the shieldconductor layer; applying a bit line high level voltage to the bit line,wherein the first shield voltage is larger than or equal to the bit linehigh level voltage; and applying a first word line operating voltage tothe word line, and a writing method of a second logic level comprises:applying a second shield voltage to the shield conductor layer; applyinga bit line low level voltage to the bit line, wherein the second shieldvoltage is smaller than or equal to the bit line low level voltage; andapplying a second word line operating voltage to the word line.
 17. Amethod of reading the dynamic random access memory according to claim 6,comprising: applying an equalizing voltage to the bit line and applyinga shield voltage to the shield conductor layer before performingreading, wherein the equalizing voltage and the shield voltage arerespectively smaller than a bit line high level voltage and larger thana bit line low level voltage, the bit line high level voltage is avoltage applying to the bit line when storing a first logic level, andthe bit line low level voltage is a voltage applying to the bit linewhen storing a second logic level; and applying a word line operatingvoltage to the word line to perform reading the dynamic random accessmemory.
 18. The method of reading the dynamic random access memoryaccording to claim 17, wherein after applying the equalizing voltage tothe bit line and after a period of waiting time, applying the word lineoperating voltage to the word line.
 19. The method of reading thedynamic random access memory according to claim 17, wherein theequalizing voltage is half of a sum of the bit line high level voltageand the bit line low level voltage.
 20. The method of reading thedynamic random access memory according to claim 17, wherein the shieldvoltage is half of a sum of the bit line high level voltage and the bitline low level voltage.